Low-Temperature Cu/SiO2 Hybrid Bonding with Low Contact Resistance Using (111)-Oriented Cu Surfaces

We adopted (111)-oriented Cu with high surface diffusivity to achieve low-temperature and low-pressure Cu/SiO2 hybrid bonding. Electroplating was employed to fabricate arrays of Cu vias with 78% (111) surface grains. The bonding temperature can be lowered to 200 degrees C, and the pressure is as low as 1.06 MPa. The bonding process can be accomplished by a 12-inch wafer-to-wafer scheme. The measured specific contact resistance is 1.2 x 10(-9) omega center dot cm(2), which is the lowest value reported in related literature for Cu-Cu joints bonded below 300 degrees C. The joints possess excellent thermal stability up to 375 degrees C. The bonding mechanism is also presented to provide more understanding on hybrid bonding.