10nm FINFET technology for low power and high performance applications

Deqi Guo,Huiling Shang,Kwanyong Seo,Balasubramanian S Haran,T Standaert,D Gupta,Emre Alptekin,Doohwan Bae,Gwinam Bae, D Chanemougame,K Cheng,J Cho,Bassem Hamieh,Jangeui Hong,Terence B Hook, Jongjin Jung,R Kambhampati,Byeongsu Kim,H Kim,Kwanho Kim, Taesang Kim,Duixian Liu, H Mallela,Pietro Montanini, Marta Mottura, Seungil Nam,Injo Ok,Y Park, Abinash S Paul,C Prindle, R Ramachandran, V Sardesai, Alexandra Scholze,S Seo,Richard G Southwick,Jay W Strane, X Sun,Gen Tsutsui,Nagesh K Tripathi,Reinaldo A Vega, M Weybright, Renguo Xie,C Yeh,H Bu,Sean D Burns,D Canaperi, M Celik,Matthew E Colburn,Hemanth Jagannathan, S Kanakasabaphthy, W Kleemeier,Lars W Liebmann, D Mcherron,Phil Oldiges,Vamsi Paruchuri,T Spooner,J H Stathis, R Divakaruni, T R Gow,John A Iacoponi, J S Jenq, R Sampson, Wonyong Yang,Mukesh Khare

Solid-State and Integrated Circuit Technology（2014）

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摘要

In this paper, we present a 10nm CMOS platform technology for low power and high performance applications with the tightest contacted poly pitch (CPP) of 64nm and metallization pitch of 48nm ever reported in the FinFET technology on both bulk and SOI substrates. A 0.053um2 SRAM bit-cell is reported with a corresponding Static Noise Margin (SNM) of 140mV at 0.75V. Intensive multi-patterning technology and various self-aligned processes have been developed with 193i lithography to overcome optical patterning limits. Multi-workfunction (MWF) gate stack has been enabled to provide Vt tunability without the variability degradation induced by Random Dopant Fluctuation (RDF) from channel dopants.

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关键词

cmos integrated circuits,mosfet,sram chips,lithography,low-power electronics,cmos platform technology,cpp,finfet technology,mwf gate stack,rdf,snm,soi substrates,bulk substrates,contacted poly pitch,metallization pitch,multipatterning technology,multiworkfunction gate stack,optical patterning limits,random dopant fluctuation,self-aligned processes,size 10 nm,size 48 nm,static noise margin,variability degradation,voltage 0.75 v,voltage 140 mv

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