Implementation of RTCVD-SiNₓ Gate Dielectric Into Enhancement-Mode GaN MIS-HEMTs Fabricated on Ultrathin-Barrier AlGaN/GaN-on-Si Platform
IEEE Transactions on Electron Devices(2021)
摘要
Rapid-thermal-chemical-vapor-deposition (RT-CVD) SiN
x
gate dielectric was utilized for the fabrication of enhancement-mode GaN-based metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) on ultrathin-barrier AlGaN/GaN heterostructure. A plasma-enhanced-atomic-layer-deposited (PEALD) SiN
x
interfacial layer was adopted to mitigate the high-temperature RTCVD process-induced degradation of the dielectric/III-nitride interface. Based on the dc- and pulsed transfer measurement results, the device with the PEALD-SiN
x
interfacial layer exhibits low V
TH
-hysteresis (0.1 V at V
GS
= 1, 10 V) and low interface trap density. Constant-capacitance deep-level transient spectroscopy and high-resolution transmission electron microscopy were also conducted to confirm the improvement of the interface quality.
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关键词
Constant-capacitance deep-level transient spectroscopy (CC-DLTS),normally-OFF GaN metal–insulator–semiconductor high electron mobility transistors (MIS-HEMTs),plasma-enhanced-atomic-layer-deposited (PEALD)-SiNₓ interfacial layer,rapid-thermal-chemical-vapor-deposition (RTCVD)-SiNₓ dielectric,recess-free gate,ultrathin-barrier (UTB) AlGaN/GaN heterostructure
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