Fuqiang Guo - State Key Lab Mesoscop Phys, Peking Univ

基本信息

Career Trajectory

Bio

Fuqiang Guo is currently pursuing the master’s degree with the School of Computer Science and Engineering, Xi’an University of Technology. His research interests include salient object detection and semantic segmentation.

Research Interests

Papers共 15 篇Author StatisticsCo-AuthorSimilar Experts

By YearBy Citation主题筛选期刊级别筛选合作者筛选合作机构筛选

Techno-Economic Analysis of Hydrogen As a Storage Solution in an Integrated Energy System for an Industrial Area in China

Jincan Zeng, Xiaoyu Liu,Minwei Liu,Xi Liu,Guori Huang,Shangheng Yao,Gengsheng He,Nan Shang,Fuqiang Guo,Peng Wang

Energies（2024）

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Rapid Detection of Capture and Emission Processes in Surface and Buffer Traps: Understanding Dynamic Degradation in GaN Power Devices

Yixu Yao,Sen Huang,Qimeng Jiang,Xinhua Wang,Yifei Huang,Yi Pei,Hongtu Qian, Hui Zhang,Fuqiang Guo,Bo Shen,Xinyu Liu

Power Electronic Devices and Components (2024): 100065-100065

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Gate Leakage Suppression and Threshold Voltage Stability Improvement in GaN-Based Enhancement-Mode HEMTs on Ultrathin-Barrier AlGaN/GaN Heterostructures with a P-Doping-free GaN Cap

Yuhao Wang,Sen Huang,Qimeng Jiang,Xinhua Wang,Fuqiang Guo,Chao Feng,Jie Fan,Haibo Yin, Xinguo Gao,Ke Wei,Yingkui Zheng,Xinyu Liu

JOURNAL OF ELECTRONIC MATERIALS（2024）

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Threshold Voltage Instability in III-nitride Heterostructure Metal–insulator–semiconductor High-Electron-mobility Transistors: Characterization and Interface Engineering

Sen Huang,Xinhua Wang,Yixu Yao,Kexin Deng, Yang,Qimeng Jiang,Xinyu Liu,Fuqiang Guo,Bo Shen,Kevin J. Chen,Yue Hao

Applied Physics Reviewsno. 2 (2024)

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Presence of High Density Positive Fixed Charges at ALD–Al2O3/GaN (cap) Interface for Efficient Recovery of 2‐DEG in Ultrathin‐Barrier AlGaN/GaN Heterostructure

Han Zhang,Sen Huang,Fuqiang Guo,Kexin Deng,Qimeng Jiang,Haibo Yin,Ke Wei, Xinguo Gao,Zhaofu Zhang,Xinhua Wang,Bo Shen,Xinyu Liu

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS（2024）

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Investigation of Trapping/de-Trapping Dynamics of Surface States in AlGaN/GaN High-Electron Mobility Transistors Based on Dual-Gate Structures

Tiantian Luan,Qimeng Jiang,Sen Huang,Xinhua Wang,Hao Jin,Fuqiang Guo,Yixu Yao,Jie Fan,Haibo Yin,Ke Wei,Yankui Li,Haojie Jiang,Junfeng Li,Xinyu Liu

MICROELECTRONIC ENGINEERING（2023）

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Polarization-Resolved Near-Infrared PdSe2 P-I-n Homojunction Photodetector

Jiayang Jiang,Weiting Xu,Fuqiang Guo,Shengxue Yang,Weikun Ge,Bo Shen,Ning Tang

Nano Letters（2023）

Cited14Views0WOSBibtex

Evolution of Deep Traps in GaN‐Based RF High Electron Mobility Transistors under High Voltage OFF‐State Stress

Min Li,Sen Huang,Xinhua Wang,Fuqiang Guo,Yixu Yao,Jingyuan Shi,Ke Wei,Xinyu Liu

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS（2022）

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Identification of Semi-ON-State Current Collapse in AlGaN/GaN HEMTs by Drain Current Deep Level Transient Spectroscopy

Yixu Yao,Sen Huang,Qimeng Jiang,Xinhua Wang,Lan Bi,Wen Shi,Fuqiang Guo,Tiantian Luan,Jie Fan,Haibo Yin, Ke Wei,Yingkui Zheng,Jingyuan Shi,Yankui Li,Qian Sun,Xinyu Liu

IEEE electron device letters（2022）

Cited14Views0EIWOSBibtex

Ultrathin-barrier AlGaN/GaN Heterostructure: an AlGaN-recess-free Technology for Fabrication of Lateral GaN-based Power Devices

Sen Huang,Xinhua Wang,Qimeng Jiang,Fuqiang Guo,Xinyu Liu

2022 6th IEEE Electron Devices Technology &amp Manufacturing Conference (EDTM) (2022)

Cited2Views0EIWOSBibtex

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