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个人简介
Katherine J. Herrick (S'91-M'00) received the B.S.E. and M.S.E. degrees in electrical engineering and Ph.D. in electrical engineering from The University of Michigan at Ann Arbor, in 1994, 1996, and 2000, respectively. Her doctoral dissertation concerned integrated 3-D microwave circuits up to W-band utilizing silicon micromachining.
She is currently a Research Scientist with Raytheon RF Components, Andover, MA, where she focuses on high-frequency metamorphic high electron-mobility transistor (MHEMT) technologies, microwave circuit design, and integrated array programs through 110 Ghz. In addition, she is part of the Intelligent RF Front End Defense Advanced Research Projects Agency (DARPA) team. Prior to joining Raytheon in January 2001, she conducted research as a Post-Doctoral Research Fellow in the areas of packaged MEMS and multilayer silicon circuits. She has authored or coauthored over 25 technical papers. She holds several patents.
研究兴趣
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ECS Transactionsno. 8 (2008): 227-234
ECS Transactionsno. 5 (2008): 1413-+
mag(2003)
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作者统计
#Papers: 14
#Citation: 328
H-Index: 8
G-Index: 14
Sociability: 3
Diversity: 0
Activity: 0
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