RF W-band wafer-to-wafer transition

IEEE Transactions on Microwave Theory and Techniques（2001）

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Abstract

Multiwafer silicon designs must provide an avenue for electrical signals to flow from wafer to wafer. For this purpose, a two-layer electrical bond is proposed to provide electrical connection between two coplanar waveguides printed on the adjacent faces of two vertically stacked silicon wafers. In addition to serving as a versatile low-temperature thermocompression wafer bond, loss of approximately 0.1 dB is measured for this novel compact packaged wafer-to-wafer transition from 75 to 110 GHz

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Key words

mimic,two-layer electrical bond,electrical connection,integrated circuit interconnections,multiwafer designs,vertically stacked wafers,coplanar waveguides,electrical signals,packaged transition,silicon,w-band,wafer-to-wafer transition,integrated circuit packaging,si,0.1 db,elemental semiconductors,wafer bonding,low-temperature thermocompression wafer bond,75 to 110 ghz,radio frequency,packaging,temperature,glass,silicon wafer,circuits,coplanar waveguide

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