Kilovolt, Low-Barrier Ga2O3 JBS diode with Ultra-Low Forward Voltage

Gallium oxide $(\text{Ga}_{2}\mathrm{O}_{3})$ has attracted extensive attention for next-generation power devices. However, the reported $\text{Ga}_{2}\mathrm{O}_{3}$ rectifiers typically exhibit high turn-on voltage (VON) and forward voltage drop $(V_{\mathrm{F}})$ , leading to increased conduction losses. Conventional power SBDs are limited by a tradeoff between $V$ F and leakage current $(I_{\mathrm{R}})$ , which may pose a critical challenge for ultra-wide bandgap (UWBG) SBDs due to the high junction electric field (and $I_{\mathrm{R}}$ ). This work demonstrates the first $\text{Ga}_{2}\mathrm{O}_{3}$ JBS diode with a low-barrier Schottky contact. Deploying the TiN contact, an ultra-low VON of 0.52 V and V F of 1 V [at forward current $(I_{\mathrm{F}})$ of 150 A/cm ² ], along with a high breakdown voltage (BV) over 1 kV, are demonstrated in $\text{Ga}2\mathrm{O}_{3}$ JBS diodes. Such V F is lower than the usual V F of commercial 650V-rated SiC JBS diodes (1.3~1.8 V), indicating the promise of $\text{Ga}_{2}\mathrm{O}_{3}$ JBS diode for power electronics applications. In addition to device innovation, this work also presents the first comparison of $\text{Ga}_{2}\mathrm{O}_{3}$ JBS diodes formed along [100] and [010] orientations, which reveals the strong impact of the orientation anisotropy of $\text{Ga}2\mathrm{O}_{3}$ on the JBS device performance.