Dynamic Time-Domain Sensing Scheme for Spin-Orbit Torque MRAM
IEEE transactions on electron devices/IEEE transactions on electron devices(2024)
Abstract
While spin-orbit torque magnetic random access memory (SOT-MRAM) have shown huge potential for building next-generation embedded memory due to their attractive characteristics, the read reliability remains one of the critical concerns precluding its further application. In this article, we propose a dynamic time-domain sensing (DTDS) scheme for SOT-MRAM, in which the conversion threshold voltage of voltage-to-time converter (VTC) can be dynamically changed according to the data stored in SOT-MRAM, so as to lengthen the time difference of the VTC output signals. The proposed DTDS scheme can achieve a significant improvement in sensing margin of time-domain, thereby increasing the read reliability and reducing bit error rate (BER). Applying it to a 128 x 128 SOT-MRAM using 28 nm CMOS technology, an average read BER of 2.84 x 10 (-10) is achieved, which is greatly reduced compared to the conventional time-domain sensing scheme.
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Key words
Sensors,Time-domain analysis,Transistors,Reliability,Magnetic tunneling,Logic gates,Inverters,Magnetic random access memory (MRAM),sensing margin,sensing scheme,spin-orbit torque (SOT)
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