New Insights into the Interface Trap Generation during Hot Carrier Degradation: Impacts of Full-band Electronic Resonance, (100) vs (110), and nMOS vs pMOS

Zirui Wang,Haoran Lu,Zixuan Sun,Cong Shen,Baokang Peng, Wen-Feng Li,Yongkang Xue,Da Wang,Zhigang Ji,Lining Zhang,Yue-Yang Liu,Xiangwei Jiang,Runsheng Wang,Ru Huang

2023 International Electron Devices Meeting (IEDM)（2023）

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摘要

In this paper, the underlying physics of interface trap generation in CMOS devices are revealed, by using full-band distribution of H atom electronic resonance states in Si-H bond at Si/SiO 2 interface, instead of previously assumed single resonance level. The idea is verified and quantified by advanced time-dependent DFT (TDDFT) calculations. Based on this, the hot carrier degradation can be well modeled to surprisingly cover a broad range of technologies and stress conditions, due to the multiple peaks found in the full-band resonance states, and a TCAD simulation flow is proposed. The model is experimentally validated, from classic region (130nm Planar) to advanced region (16/14nm FinFET) and extendable to GAA, covering both (100) & (110) and n & p channels with various V gs /V ds bias conditions. This work provides a universal understanding and efficient simulation framework for the hot carrier reliability.

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关键词

Hot Electrons,Electronic Resonance,Interface Trap,Interface Trap Generation,Density Functional Theory,Density Functional Theory Calculations,Electronic States,H Atoms,Flow Simulation,Time-dependent Density Functional Theory,Resonant States,Universal Understanding,P-channel,Deeper Understanding,Density Of States,Ab Initio,Bond Breaking,Carrier Density,Energy Carrier,Carrier Type,Partial Density Of States,Carrier Energy,Planar Devices,eV Electron,High Density Of States,Source Side

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