The Transition of Threshold Voltage Shift of Al $_{\text{2}}$ O $_{\text{3}}$ /Si $_{\text{3}}$ N $_{\text{4}}$ AlGaN/GaN MIS-HEMTs Under Negative Gate Bias Stress From DC to AC
IEEE Transactions on Electron Devices（2024）
关键词
AC stress,metal–insulator–semiconductor high electron mobility transistors (MIS-HEMTs),negative gate bias stress (NGBS)
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