The Transition of Threshold Voltage Shift of Al $_{\text{2}}$ O $_{\text{3}}$ /Si $_{\text{3}}$ N $_{\text{4}}$ AlGaN/GaN MIS-HEMTs Under Negative Gate Bias Stress From DC to AC
IEEE Transactions on Electron Devices(2024)
摘要
In this study, the reliability issues are discussed under dc and ac negative gate bias stress (ac-NGBS) in Al
$_\text{2}$
O
$_\text{3}$
/Si
$_\text{3}$
N
$_\text{4}$
metal–insulator–semiconductor high electron mobility transistors (MIS-HEMTs). Converse degradation between these two stress conditions is discovered. The holes generated by trap-assisted thermionic field emission (TA-TFE) are trapped into the Al
$_{\text{2}}$
O
$_{\text{3}}$
layer, so that the threshold voltage (
$\textit{V}_{\text{th}}$
) decreases under dc negative gate bias stress (dc-NGBS).
$\textit{V}_{\text{th}}$
increases because of the hot electrons injected into the GaN layer, while the device is turned on quickly under ac-NGBS. In addition, the degradation mechanisms under dc-NGBS and ac-NGBS are confirmed by the OFF-state gate and drain leakages, respectively. Silvaco TCAD is used to validate the degradation mechanism under ac-NGBS. Finally, the characteristics of the
$\textit{V}_{\text{th}}$
shift transition from dc to ac NGBS are discussed.
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关键词
AC stress,metal–insulator–semiconductor high electron mobility transistors (MIS-HEMTs),negative gate bias stress (NGBS)
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