基本信息
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Bio
He has made fundamental and pioneering contributions to semiconductor devices, especially the metal-semiconductor contacts, microwave devices, and MOSFET technology. Of particular importance is his discovery with Dr. D. Kahng of the floating-gate memory (FGM) effect which has subsequently given rise to a large family of memory devices including EPROM, EEPROM and Flash memory. FGM is a ground-breaking technology for long-term information storage (superseding HDD, optical disk and magnetic tape) and enables the invention of nearly all modern electronic systems such as the digital cellular phone, tablet computer, smart IC card, digital camera, digital television, portable DVD, MP3 music player, pacemaker, implantable defibrillator, global positioning system (GPS), and anti-lock braking system (ABS). FGM has also empowered technology for the advancement of the artificial intelligence, big data, cloud computing, internet of things, robotics and solid-state drive.
Research Interests
Papers共 349 篇Author StatisticsCo-AuthorSimilar Experts
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JOURNAL OF APPLIED PHYSICSno. 6 (2024)
Kuan-Ju Zhou,Ting-Chang Chang,Po-Yu Yen,Yu-An Chen,Ya-Ting Chien,Bo-Shen Huang, Po-Yi Lee, Tzu-Hsuan Juan,Simon M. Sze,Yang-Shun Fan,Chen-Shuo Huang,Chih-Hung Tsai
IEEE Electron Device Lettersno. 99 (2024): 1-1
SEMICONDUCTOR SCIENCE AND TECHNOLOGYno. 2 (2024)
IEEE Transactions on Electron Devicesno. 99 (2024): 1-6
Po-Yu Yen,Kuan-Ju Zhou,Pei-Jun Sun, Yu-An Chen,Ya-Ting Chien,Bo-Shen Huang, Po-Yi Lee, Tzu-Hsuan Juan, Kui You Shao,Yu Shan Lin,Simon M. Sze,Ting-Chang Chang
IEEE Electron Device Lettersno. 99 (2024): 1-1
IEEE Transactions on Electron Devicespp.1-6, (2023)
SSRN Electronic Journalno. 8 (2023): 085004-085004
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Author Statistics
#Papers: 260
#Citation: 5332
H-Index: 38
G-Index: 61
Sociability: 7
Diversity: 0
Activity: 2
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