Transport and trap states in proton irradiated ultra-thick κ-Ga2O3

A. Y. Polyakov,В. И. Николаев, A. I. Pechnikov, E. B. Yakimov, П. Б. Лагов, I. Shchemerov, A. A. Vasilev, А. I. Kochkova, А. В. Черных,In−Hwan Lee, S. J. Pearton

Journal of vacuum science & technology(2023)

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摘要
Changes induced by irradiation with 1.1 MeV protons in the transport properties and deep trap spectra of thick (>80 μm) undoped κ-Ga2O3 layers grown on sapphire are reported. Prior to irradiation, the films had a donor concentration of ∼1015 cm−3, with the two dominant donors having ionization energies of 0.25 and 0.15 eV, respectively. The main electron traps were located at Ec−0.7 eV. Deep acceptor spectra measured by capacitance-voltage profiling under illumination showed optical ionization thresholds near 2, 2.8, and 3.4 eV. The diffusion length of nonequilibrium charge carriers for ɛ-Ga2O3 was 70 ± 5 nm prior to irradiation. After irradiation with 1.1 MeV protons to a fluence of 1014 cm−2, there was total depletion of mobile charge carriers in the top 4.5 μm of the film, close to the estimated proton range. The carrier removal rate was 10–20 cm−1, a factor of 5–10 lower than in β-Ga2O3, while the concentration of deep acceptors in the lower half of the bandgap and the diffusion length showed no significant change.
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proton,ultra-thick
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