Improved ferroelectric properties of CMOS back-end-of-line compatible Hf0.5Zr0.5O2 thin films by introducing dielectric layers

Hf0.5Zr0.5O2 (HZO) ferroelectric thin films have gained significant attention for the development of nextgeneration ferroelectric memories by complementary -metal -oxide semiconductor (CMOS) back -end -ofline (BEOL) processing, due to their relatively low crystallization temperature. However, it remains challenging to achieve excellent ferroelectric properties with post deposition annealing (PDA) process at a BEOL compatible temperature. Along these lines, in this work, it is demonstrated that the ferroelectricity of 15 nm thick HZO thin film prepared by PDA process at 400 degrees C can be improved to varying degrees, via depositing 2 nm thick dielectric layers of Al2O3, HfO2, or ZrO2 at either the bottom or the top of the film. Notably, the HZO thin film with the top-Al2O3 layer exhibits remarkable ferroelectric properties, which are independent of the thickness of HZO. The 6 nm thick HZO thin film shows a total remanent polarization (2Pr) of 31 mC/cm2 under an operating voltage of 2.5 V. These results represent a significant advancement in the fabrication of high-performance, BEOL compatible ferroelectric memories, as compared to previously reported state-of-the-art works. (c) 2023 The Authors. Published by Elsevier B.V. on behalf of The Chinese Ceramic Society. This is an open access article under the CC BY -NC -ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/).