Editors' Choice-Structural, Electrical, and Luminescent Properties of Orthorhombic -Ga₂O₃ Grown by Epitaxial Lateral Overgrowth

The properties of orthorhombic kappa-Ga2O3 films grown by Epitaxial Lateral Overgrowth (ELOG) were studied by Scanning Transmission Electron Microscopy (STEM), X-ray diffraction, capacitance-voltage profiling, Microcathodoluminescence (MCL) spectroscopy and imaging. ELOG mask was formed by deposition of SiO2 stripes on TiO2 buffer prepared on basal plane sapphire, with the stripes going along the [1120] direction of sapphire. kappa-Ga2O3 ELOG growth was performed using Halide Vapor Phase Epitaxy (HVPE), with ELOG wing of the structure formed by lateral overgrowth over the 20 mu m-wide SiO2 stripes, while growth in between the stripes proceeded initially by vertical growth in the 5-mu m-wide windows. TEM analysis showed that the material in the windows comprised 120(o) rotational nanodomains typical of kappa-Ga2O3, while, in the wing regions, the material was single-domain monocrystalline. The films were conducting, with the net donor density close to 10(13) cm(-3). The data suggested the material in the windows have much higher resistance than in the wings. MCL spectra and imaging revealed much higher density of nonradiative recombination centers in the windows than in the wings.(c) 2023 The Author(s). Published on behalf of The Electrochemical Society by IOP Publishing Limited. This is an open access article distributed under the terms of the Creative Commons Attribution 4.0 License (CC BY, http://creativecommons.org/licenses/by/4.0/), which permits unrestricted reuse of the work in any medium, provided the original work is properly cited.