Suppression of Reverse Leakage in Enhancement-Mode GaN High-Electron-Mobility Transistor by Extended PGaN Technology

An extended PGaN structure is proposed and successfully adopted on a Schottky PGaN enhancement-mode GaN high-electron-mobility transistor (HEMT) platform. The device features a drain saturation current of 256 mA mm(-1), a threshold voltage of +1.8 V, and an ON resistance of 19.781 omega mm. It is found that using the PGaN extension structure on both HEMTs and circle Schottky barrier diodes (SBDs) efficiently reduces leakage current across a wide temperature range (from -55 degrees C to 150 degrees C). Furthermore, multifrequency CV measurements of interdigitated SBDs are employed to assess the extension structure's dynamic responsiveness.