First Demonstration of High PAE Performance Using InGaN Channel HEMT for 5G RF Applications
2022 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)(2022)
摘要
The conventional GaN channel HEMT will suffer the significant short channel effect and high-temperature degradation due to its weak channel confinement. Although the InGaN channel double-heterostructure HEMT (DH-HEMT) has been reported to address this issue well due to the strong quantum confinement, the efficiency of the InGaN channel lacks investigation. In this work, a high PAE performance of the InGaN channel heterostructure has been reported for the first time. The fabricated InGaN channel device with a gate length of 200-nm achieved a high f
T
/f
max
of 36.7 and 97 GHz, respectively. 3.6 GHz continuous-wave load-pull measurements gain a high power-added efficiency (PAE) of 59.4 %, and an associated output power density (Pout) of 2.14 W/mm at V
DS
= 20 V. It is the first time for the InGaN channel achieved so high PAE performance, the results presented here are benchmarked against the state-of-the-art (SOA) InGaN channel. This work illustrated that the InGaN channel with reasonable design can boost the 5G base-station applications.
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关键词
Group III-Nitrides,GaN,HEMT,InGaN channel,recess etching,power amplifier
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