A Comparison of Radiation-Induced and High-Field Electrically Stress Induced Interface Defects in Si/SiO2 MOSFETs via Electrically Detected Magnetic Resonance

We utilize electrically detected magnetic resonance (EDMR) measurements to compare high-field stressed, and gamma irradiated Si/SiO2 metal-oxide-silicon (MOS) structures. We utilize spin-dependent recombination (SDR) EDMR detected using the Fitzgerald and Grove dc I-V approach to compare the effects of high-field electrical stressing and gamma irradiation on defect formation at and near the Si/SiO2 interface. As anticipated, both greatly increase the concentration of Pb centers (silicon dangling bonds at the interface) densities. The irradiation also generated a significant increase in the dc I-V EDMR response of Eʹ centers (oxygen vacancies in the SiO2 films), whereas the generation of an Eʹ EDMR response in high-field stressing is much weaker than in the gamma irradiation case. These results likely suggest a difference in their physical distribution resulting from radiation damage and high electric field stressing.