Atomic-scale defects generated in the early/intermediate stages of dielectric breakdown in Si/SiO₂ transistors

Electrically detected magnetic resonance and near-zero-field magnetoresistance measurements were used to study atomic-scale traps generated during high-field gate stressing in Si/SiO2 MOSFETs. The defects observed are almost certainly important to time-dependent dielectric breakdown. The measurements were made with spin-dependent recombination current involving defects at and near the Si/SiO2 boundary. The interface traps observed are P-b0 and P-b1 centers, which are silicon dangling bond defects. The ratio of P-b0/P-b1 is dependent on the gate stressing polarity. Electrically detected magnetic resonance measurements also reveal generation of E' oxide defects near the Si/SiO2 interface. Near-zero-field magnetoresistance measurements made throughout stressing reveal that the local hyperfine environment of the interface traps changes with stressing time; these changes are almost certainly due to the redistribution of hydrogen near the interface. Published under an exclusive license by AIP Publishing.