Characterization of critical peak current and model of Cu/low-k interconnects under short pulse-width conditions

2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM)(2017)

Cited 2|Views10
No score
Abstract
We characterize the critical peak current which causes melting of Cu/low-k interconnects under short-pulse conditions. High-current with 100ps pulse width is achieved using an on-die pulse generator A model incorporating the heating of the metal layer and heat diffusion through the insulator layer is supported by the experimental results. The model accurately describes the relationship between peak current and pulse width (20 μs–100ps), and can be used to generate reliable guidelines for high-current applications.
More
Translated text
Key words
low-k interconnects,short pulse-width conditions,critical peak current,on-die pulse generator,metal layer,heat diffusion,insulator layer,high-current applications,Cu
AI Read Science
Must-Reading Tree
Example
Generate MRT to find the research sequence of this paper
Chat Paper
Summary is being generated by the instructions you defined