RMG nMOS 1st process enabling 10x lower gate resistivity in N7 bulk FinFETs
2015 Symposium on VLSI Technology (VLSI Technology)(2015)
Abstract
A novel RMG process in which the n-type work function metal (nWFM) is deposited first and then selectively removed from the pMOS devices is presented for the first time. The key benefit of this nMOS 1
st
process lies in increased gate-fill space which results in about 10× improvement in the pMOS effective gate resistivity at gate lengths (L
G
) around 22 nm, an improvement which is predicted by modeling to extend down to L
G
<;14 nm. The complete removal of the nWFM in the pMOS devices is evidenced by restored p-type effective work function (eWF) values in large area capacitors and matched pMOS threshold voltage (V
T
) values in bulk FinFET devices with L
G
down to 22 nm. Furthermore, selective removal of the nWFM is confirmed physically down to L
G
~16 nm providing further evidence that the process is scalable towards N7 dimensions.
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Key words
replacement metal gate,RMG nMOS process,lower gate resistivity,N7 bulk FinFET,n-type work function metal,nWFM,pMOS devices,gate-fill space,p-type effective work function,eWF
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