Yasuo Ohno (M’01) received the B.A. degree in pure and applied science from Tokyo University, Tokyo, Japan, in 1970, and the Ph.D. degree in electrical engineering from the Tokyo Institute of Technology, Tokyo, in 1994. He joined NEC Corporation, Tokyo, in 1970, and has worked on semiconductor devices including silicon LSIs, GaAs LEDs, and FETs and GaN FETs. He joined the University of Tokushima, Tokushima, Japan, in 2001, where he was a Professor with the Institute of Technology and Science, and worked on the research of GaN power devices and its application to microwave systems. In 2012, he established e-Device, Inc., Sapporo, Japan, where he is currently a Director. He is a member of the Japan Society of Applied Physics, a fellow of the Institute of Electronics, Information, and Communication Engineers.