基本信息
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Bio
Juan Sabate received the Diploma in electrical engineering from
Polytechnic University of Catalunya in Barcelona, Spain; and the M.S. and Ph.D. degrees in electrical engineering from
Virginia Tech, Blacksburg, VA, USA.
He joined GE Global Research in 2000 as a Power Electronics Senior Researcher. He has led the new generation
gradient driver projects for GE Healthcare MRI scanner, currently in use by GE Healthcare in high performance
products. He has been a key technical contributor for new power electronics concepts and is leading projects for the
future generation of MRI drivers using new semiconductor technology. He has also contributed to developing new
portfolios for GE energy and is actively consulting with GE Aviation Systems to introduce the new SiC devices for
power conversion. Prior to joining GE, he was a Senior Researcher for Philips Electronics and a Power Electronics
Specialist for HP R&D. He also has served as an Assistant Professor in the Department of Electrical Engineering,
Ramon Llull University, Barcelona, Spain. He holds 25 issued patents. He has more than 65 peer reviewed publications,
and has presented invited tutorials in International Society for Magnetic Resonance in Medicine.
Research Interests
Papers共 72 篇Author StatisticsCo-AuthorSimilar Experts
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引用量
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2022 IEEE Energy Conversion Congress and Exposition (ECCE)pp.1-6, (2022)
2017 IEEE Applied Power Electronics Conference and Exposition (APEC)pp.1652-1658, (2017)
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Author Statistics
#Papers: 79
#Citation: 3688
H-Index: 28
G-Index: 60
Sociability: 5
Diversity: 1
Activity: 0
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