GIDL Analysis of Novel 4F2 VCT Architecture Using TCAD Simulations

Yi Ling, Haochang Lyu, Bowen Dong, Xinhe Wang, Gengfei Li,Yongkui Zhang,Guilei Wang,Chao Zhao

2025 Conference of Science and Technology of Integrated Circuits (CSTIC)（2025）

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TCAD Simulation,Gate-induced Drain Leakage,Epitaxial,Channel Length,Doping Concentration,Channel Thickness,Transistor Channel,Secondary Channel,Energy Band,Work Function,Tunneling Current,Low Work Function,Gate Structure,High Doping Concentration,Subthreshold Slope

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