Monolithic 3-D Integration of Diverse Memories: Resistive Switching (RRAM) and Gain Cell (GC) Memory Integrated on Si CMOS
IEEE Transactions on Electron Devices(2025)
Key words
Edge training and inference,gain cell (GC),monolithic 3-D integration,on-chip memory,oxide semiconductor (OS),resistive switching random access memory (RRAM)
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