SiO2/β-Ga2O3 (001) MIS Capacitors with Ideal Flat Band Voltage, Small Hysteresis, and Low Interface Traps
IEEE Transactions on Electron Devices（2025）
关键词
Beta gallium oxide (β-Ga 2 O 3 ),interface properties,metal–insulator–semiconductor (MIS) capacitor,postdeposition annealing (PDA),SiO 2
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