The Indirect L-valleys Splitting Inductive Optical Gain Variation of $$\hbox {Ge}_{1-X}\hbox {sn}_{x}$$ Ge 1 - X Sn X Nanowires Caused by [110] Direction Uniaxial Stress
doaj（2025）
Key words
$$\hbox {Ge}_{1-x}\hbox {Sn}_{x}$$ Ge 1 - x Sn x nanowires,Effective-mass theory,Optical gain,[110] direction uniaxial stress,L-valleys splitting
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