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Ambipolarity Suppression in Electrically Doped Tunnel Field Effect Transistor Using Asymmetric Bias in Polarity Gates

Akshatha Bhat,Bhaskar Awadhiya,Sameer Yadav,Yashwanth Nanjappa,Abhishek Pahuja,Sachin Agrawal

e-Prime Advances in Electrical Engineering, Electronics and Energy（2025）

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Key words
Ambipolarity,Electrically doped TFET,Boltzmann limit
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