Enhancement-Mode Atomic Layer Deposited W-Doped In2O3 Transistor at 55 Nm Channel Length by Oxide Capping Layer with Improved Stability

Qing Lin,Nathaniel Safron,Donglai Zhong,Goutham Arutchelvan,Carlo Gilardi,Chanyoung Yoo, Jonathan Hartanto,Balreen Saini, Sheng-Chih Lai,Gregory Pitner, Gary Chen, Marvin M.F. Chang,Yu-Ming Lin,Wilman Tsai,Paul C. McIntyre,Iuliana P. Radu

2024 IEEE International Electron Devices Meeting (IEDM)（2024）

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Key words

Channel Length,Atomic Layer Deposition,Oxide Capping,Oxide Capping Layer,Charge Density,Positive Shift,Contact Resistance,Field-effect Transistors,Threshold Voltage,Subthreshold Slope,Bias Stress,Amorphous Semiconductors,Effect Of Temperature,Formation Of Contacts,High Electron Mobility

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