Stacked Channel Transistors with 2D Materials: an Integration Perspective

Yun-Yan Chung, Bo-Jhih Chou,Wei-Sheng Yun,Chen-Feng Hsu, Shao-Ming Yu, Yu-I Chang, Chen-Yi Lee,Sui-An Chou, Po-Hsun Ho,Aslan Wei,D. Mahaveer Sathaiya,Bo-Heng Liu,Chien-Wei Chen, Chien-Ying Su,Chi-Chung Kei, Fu-Kuo Hsueh, Tuo-Hung Hou,Wen-Hao Chang,Jin Cai,Chung-Cheng Wu,Jeff Wu,Wei-Yen Woon,Tung-Ying Lee,Chao-Hsin Chien,Chao-Ching Cheng,Iuliana P. Radu

2024 IEEE International Electron Devices Meeting (IEDM)（2024）

引用 0|浏览4

关键词

2D Materials,Transistor Channel,Discharge Process,Monolayer MoS2,Subthreshold Swing,Metal Gate,Gate Length,High Gate,Gate Stack,SEM Images,Mechanical Forces,Elemental Mapping,Protective Layer,Contact Resistance,Transition Metal Dichalcogenides,Chemical Warfare,Simple Flow,Sacrificial Layer,Monolayer Transition Metal Dichalcogenides,On-off Ratio,Edge Contact,Monolayer WSe2,Cross-sectional TEM

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要