Edge Continual Training and Inference with RRAM-Gain Cell Memory Integrated on Si CMOS

Shuhan Liu,Robert M. Radway, Xinxin Wang,Filippo Moro,Jean-Francois Nodin,Koustav Jana, Shuting Du,Luke R. Upton, Chen,Jian Chen,Haitong Li,Francois Andrieu,Elisa Vianello,Priyanka Raina,Subhasish Mitra,H.-S. Philip Wong

2024 IEEE International Electron Devices Meeting (IEDM)（2024）

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关键词

Data Transfer,Indium Tin Oxide,Incremental Learning,Edge Devices,Form Factor,Transfer Rate,Environmental Data,Passivation Layer,High Bandwidth,Optimal Voltage,Area Overhead,Energy Leakage,Memory Technologies,Vertical Connections

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