Improved Capacitive Memory Window for Non-Destructive Read in HZO-Based Ferroelectric Capacitors with Incorporation of Semiconducting IGZO

S. Mukherjee,J. Bizindavyi,S. Clima,Y. Xiang,M. I. Popovici,A. Belmonte,R. Izmailov,J. Stiers,A. Kruv,S. Subhechha,H. Dekkers,G. S. Kar, G. De,N. Ronchi, Z. Belkhiri,G. Van Den Bosch,M. Rosmeulen,F. Catthoor, S. Yu,V. V. Afanas'ev,J. Van Houdt

2024 IEEE International Electron Devices Meeting (IEDM)（2024）

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Key words

Nondestructive Reading,Vertical Integration,Random Access Memory,Memory Devices,Non-volatile Memory,Semiconductor Layer,Read Operation,Density Functional Theory,Formation Energy,Device Operation,Oxygen Scavenging,Displacement Current,Ferroelectric Layer,Turnitin

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