Precise Alignment in Ultra-Thin (< 1 Μm) Interlayer Wafer-Level Active Device Transfer with SOI Temporary Bonding

Bo-Jheng Shih, Shie-Ping Chang, Ting-Yu Chen, Zih-Yang Chen, Po-Jung Sung,Nein-Chih Lin,Chih-Chao Yang,Po-Tsang Huang,Huang-Chung Cheng, Ming-Yang Li,Iuliana P. Radu,Kuan-Neng Chen

2024 IEEE International Electron Devices Meeting (IEDM)（2024）

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关键词

Ultrathin Interlayer,Young’s Modulus,Thermal Management,Wet Etching,Crystallinity,Raman Spectroscopy,Device Performance,Active Layer,Complete Removal,Highest Temperature,Silicon Wafer,Vertical Integration,Adhesive Layer,Silicon Surface,Silicon-on-insulator,Μm Thick Layer,Curves Of Devices,Tetramethylammonium Hydroxide,Si Layer,Glass Wafer,3D Integration,Thermal Budget,Subsequent Etching

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