Enhancing FeFET Performance Through H2 Plasma Treatment: Improving Stability, Conductance, and Hamming Distances in FeCAM Designs

Z.-R. Huang, Z.-K. Chen, Y.-T. Tsai, C.-S. Pai,W.-N. Chang, C.-C. Lin,Y.-T. Tang

2024 IEEE International Electron Devices Meeting (IEDM)（2024）

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关键词

Hamming Distance,H2 Plasma Treatment,Neural Network,Thermal Stability,Application Of Neural Networks,Interface Trap,Low Voltage,Pulse Width,Voltage Drop,Interfacial Charge,Charge Trapping,Interface Defects

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