High-Speed Ultraviolet Photodetector Based on P-Gan Gate HEMT for Flame Monitoring

Ercan Yilmaz, Haodong Wang,Emre Doganci, Meixin Feng,Qian Sun,Alex Mutale,Aysegul Kahraman,Umutcan Gurer,Ozan Yilmaz, Azer Sadigov,Farid Ahmadov,Erhan Budak

IEEE Transactions on Electron Devices（2025）

引用 0|浏览4

关键词

2-D electron gas (2DEG),GaN,high electron mobility transistor (HEMT),persistent photoconductivity (PPC) effect,phototransistor fabrication,ultraviolet detector

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要