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Understanding the Slow Erase Operation in IGZO-channel FeFETs: the Role of Positive Charge Generation Kinetics

Zhuo Chen,Nicolò Ronchi,Roman Izmailov,Hongwei Tang,Mihaela I. Popovici,Harold Dekkers, Alexandru Pavel,Geert Van den bosch,Maarten Rosmeulen,Valeri V. Afanas’ev,Jan Van Houdt

IEEE Journal of the Electron Devices Society（2025）

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关键词
IGZO,Oxide Semiconductor,Ferroelectric,HZO,switching kinetics
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