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Passivation of Substrates with Hydrogen to Reduce the Number of Electron Traps in the Buffer Layer at the Contact of Silicon with Ba1-xSrxTiO3

Dmitry A. Belorusov, Evgeniy I. Goldman,Galina V. Chucheva, Mikhail S. Afanasyev, Vladimir A. Pilipenko,Alina V. Semchenko

Modern Electronic Materials（2024）

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