Threshold Voltage Control in AlGaN/GaN/AlGaN Double-Heterostructure MISHFET Utilizing 2-D Electron and Hole Gases

Arno Kirchbrücher,Gerrit Lükens,Carsten Beckmann,Jasmin Ehrler, Qi Shu,Jens Wieben,Thorsten Zweipfennig,Holger Kalisch,Andrei Vescan

IEEE Transactions on Electron Devices（2025）

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关键词

2-D electron gas (2DEG),2-D hole gas (2DHG),charge trapping,double heterostructure (DH),gallium nitride,metal–insulator–semiconductor heterostructure field-effect transistor (MISHFET)

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