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Split-p-GaN Gate HEMT with Suppressed Negative Vth Shift and Enhanced Robustness Against False Turn-On

Yunhong Lao,Jin Wei,Maojun Wang,Jingjing Yu, Zetao Fan,Junjie Yang,Jiawei Cui,Teng Li,Han Yang,Muqin Nuo, Qimeng Jiang,Gaofei Tang,Bo Shen

IEEE Electron Device Letters（2025）

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Key words
negative Vth shift,false turn-on,gate/drain coupled barrier lowering (GDCBL) effect,split-p-GaN gate
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