A 76.9 Ppm/k Nano-Watt PVT-Insensitive CMOS Voltage Reference Operating from 4 to 300 K for Integrated Cryogenic Quantum Interface
IEEE JOURNAL OF SOLID-STATE CIRCUITS（2025）
关键词
Cryogenics,Temperature distribution,Threshold voltage,Voltage measurement,Temperature control,Voltage control,Transistors,Process control,Standards,Power demand,4 K,CMOS process,cryogenic temperature,low power,nanowatt power consumption,process-compensated,process voltage temperature (PVT)-insensitive,quantum integrate interface,quantum interface,trim-free,voltage reference
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