Improved Electrical Properties of MoS2 Negative-Capacitance Field-Effect Transistors by Using Ferroelectric Hf1-xYxOy Thin Films Plus NH3-Plasma Treatment
IEEE TRANSACTIONS ON ELECTRON DEVICES（2025）
关键词
Hafnium,Hafnium oxide,Capacitance,Electrodes,Hysteresis,Logic gates,Annealing,Three-dimensional displays,Silicon,Performance evaluation,Hf1-xYxOy (HYO),hysteresis,negative-capacitance field-effect transistor (NCFET),NH3 plasma treatment,subthreshold swing (SS)
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