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Cross-Point Ferroelectric Hf0.5Zr0.5O2 Capacitors for Remanent Polarization-Driven In-Memory Computing

Minjong Lee,Peng Zhou,Heber Hernandez-Arriaga,Yong Chan Jung, Jin-Hyun Kim,Naimul Hassan,Wesley H. Brigner,Laura Deremo,Joseph S. Friedman,Jiyoung Kim

NANO LETTERS（2025）

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Key words
Ferroelectric Hf0.5Zr0.5O2 (HZO),vector-matrixmultiplication (VMM),binary weight,in-memory computing(IMC),neuromorphic computing
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