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Study of High Performance Nanoscale Channel Length Vertical Transistors with a Self-Aligned Blocking Layer.

Goeun Pyo, Su Jin Heo,Dongsu Kim, Minji Yu, Joonghyun Kim,Seungnam Cha,Hyuk-Jun Kwon,Jae Eun Jang

ACS APPLIED MATERIALS & INTERFACES(2025)

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Key words
vertical thin film transistor,oxide semiconductor transistor,nanoscale channel length,graphene transistor,vertically stacked transistor
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