An Accurate Model of RF GaN HEMTs Based on the 0.12 Um Process by Using the Physics-Based ASM-HEMT Model

Tao Guo,Chang Wu,Tao Zhang,Yulei Zeng, Xin Xiong, Yu Wang,Jiayan Wu, Chenglong Li, Zhao Liu, Jielong Liu,Kai Wang

2024 21st China International Forum on Solid State Lighting & 2024 10th International Forum on Wide Bandgap Semiconductors (SSLCHINA IFWS)（2024）

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