Mixed-Dimensional Α-In2se3/ge Junction Field-Effect Transistors with High Electron Mobility and Low Subthreshold Swing

Yao Zhou, Jianming Huang, Jianru Chen,Jingyi Ma, Zhidong Pan, Tao Zheng, Mingjie Cao,Xin Luo, Yuheng Sang, Mengmeng Yang,Zhaoqiang Zheng,Dongxiang Luo,Wenlong Chen,Yiming Sun, Wei Gao

IEEE TRANSACTIONS ON ELECTRON DEVICES（2025）

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关键词

Germanium,JFETs,Heterojunctions,Logic gates,Photonic band gap,Field effect transistors,Substrates,Silicon,Scanning electron microscopy,Electrons,alpha-In2Se3/Ge,electron mobility,junction field-effect transistors (JFETs),subthreshold swing (SS)

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