基于890 nm半导体激光器的InGaAs/GaAsP多量子阱的外延生长条件及其界面质量研究

Mu Jingfei, Wang Bin, Zhou Yinli, Chen Chao,Zeng Yugang, Zhang Jianwei, Zhang Xing, Liu Tianjiao, Zhang Zhuo, Xu Yuehui, Yuan Gaohui, Zhang Jiye, Ning Yongqiang, Wang Lijun

Chinese Journal of Lasers（2025）

Cited 0|Views1

Key words

multi-quantum wells,epitaxial growth,growth temperature,growth rate,interface quality

AI Read Science

Must-Reading Tree

Example

Generate MRT to find the research sequence of this paper

Chat Paper

Summary is being generated by the instructions you defined