Impact of 12nm FinFET Technology Variations on TID Effects: A Comparative Study of GF 12LP and 12LP+ at the Transistor Level

Aldo I. Vidana,Nathaniel A. Dodds,R. Nathan Nowlin, Phil J. Oldiges, Keshab R. Sapkota, Trace M. Wallace, Brian M. Dodd, Jenny Xiong,Jeffrey S. Kauppila,Lloyd W. Massengill,Aymeric Privat,Hugh J. Barnaby

IEEE Transactions on Nuclear Science（2025）

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关键词

FinFET,total ionizing dose,number of fins per transistor,threshold voltage,leakage current,dual metal gate work functions

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