Enhanced Performance and Gate Bias Stress Stability of Atomic-Layer-Deposited Amorphous Zn-Sn-O Thin-Film Transistors with HfO2 and Al-Doped TiO2 Interlayers on SiO2 Gate Oxide
ACS APPLIED ELECTRONIC MATERIALS(2025)
关键词
amorphous oxide semiconductor,thin-film transistor,Zn-Sn-O,atomic-layer deposition,gate insulator,gate bias stress stability
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