Temperature Coefficients for Impact Ionization in Silicon Derived from Temperature Coefficients of Avalanche Voltage

Philipp Steinmann,Daniel Lichtenwalner,Suman Das, Jae Park,Shane Stein,Sei-Hyung Ryu

IEEE TRANSACTIONS ON ELECTRON DEVICES（2025）

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Silicon,MOSFET,Temperature distribution,Temperature measurement,Fitting,Avalanche breakdown,Temperature dependence,Semiconductor device measurement,Electrons,Impact ionization,Avalanche,breakdown,impact ionization (II),power MOSFETs,temperature coefficients

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