Physical Modeling for Micropattern-Trench IGBT and P-I-n Diode with Dynamic Control Lumped Charge
IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS（2024）
关键词
Dynamic 2-D excess carrier distribution,dynamic control lumped-charge (DCLC)-based physical model,injection enhancement (IE) effect,insulated gate bipolar transistors (IGBTs),micropattern trench (MPT)
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