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Electrothermal Enhancement of Β-(Alxga1-x)2o3/ga2o3 Heterostructure Field-Effect Transistors Via Back-End-of-line Sputter-Deposited AlN Layer

James Spencer Lundh,Cory Cress,Alan G. Jacobs,Zhe Cheng,Hannah N. Masten,Joseph A. Spencer,Kohei Sasaki,James Gallagher,Andrew D. Koehler,Keita Konishi,Samuel Graham,Akito Kuramata,Travis J. Anderson,Marko J. Tadjer,Karl D. Hobart,Michael A. Mastro

JOURNAL OF APPLIED PHYSICS（2024）

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